Ion traps with 3D structures for quantum computing fabricated using Selective Laser-induced Etching
Scalable quantum processors based on trapped ions require novel trap designs which enhance the performance and reliability and increase the integrability for optical addressing. Nevertheless, a simple yet precise fabrication must be ensured. In the project “IQuAn” we demonstrated the fabrication of an ion trap with 3D structures in fused silica using our two-step process Selective Laser-induced Etching SLE.
Find out more about the IQuAn project and the SLE process and talk to our experts at LASER World of PHOTONICS (Hall A4.180) and at AKL´22 – International Laser Technology Congress.